in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) www.in?neon.com/opto ? 1-800-777-4363 1 april 29, 1999 features ? operating temperature range, C55c to +125c ? current transfer ratio guaranteed from C55c to +100c ambient temperature range ? high current transfer ratio at low input current ? isolation test voltage, 3000 v dc ? two isolated channels per package ? standard 8 pin dip package description the ILH200 is designed especially for hi-rel applica- tions requiring optical isolation with high current trans- fer ratio and low saturation v ce . each channel of the optocoupler consists of a light emitting diode and a npn silicon phototransistor mounted and coupled in an 8 pin hermetically sealed dip package. the low input current makes the ILH200 well suited for direct cmos to lsttl/ttl interfaces. maximum ratings emitter (per channel) reverse voltage................................................................................ 6.0 v forward current ..............................................................................60 ma peak forward current (1) ..................................................................1.0 a power dissipation .......................................................................... 75 mw derate linearly from 25c ..................................................... 0.75 mw/c detector (per channel) collector-emitter voltage .................................................................. 70 v emitter-collector voltage ................................................................. 7.0 v continuous collector current .........................................................50 ma power dissipation ........................................................................ 100 mw derate linearly from 25c ....................................................... 1.0 mw/c package input to output isolation test voltage (2 ) ...................................3000 vdc storage temperature range.......................................... C65c to +150c operating temperature range ...................................... C55c to +125c junction temperature ..................................................................... 150c soldering time at 240c, 1.6 mm from case................................ 10 sec. power dissipation ........................................................................ 350 mw derate linearly from 25c ....................................................... 3.5 mw/c notes: 1. values applies for p w 1.0 ms, prr 300 pps. 2. measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. t a =25c and duration=1.0 second, rh=45%. dimensions in inches (mm) .390 .005 1 2 3 4 8 7 6 5 siemens xxx xxxx xxyy .320 (8.13) max. .125 (3.18) min. .018 .002 (.46 .05) .100 .010 (2.54 .25) .020 (.51) min. .150 (3.81) max. .010 .002 (.25 .05) .300 (7.62) typ. (9.91 .13) anode cathode emitter collector 8 7 4 3 cathode anode 2 1 collector emitter 6 5 ILH200 hermetic phototransistor dual channel optocoupler gy,,
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) ILH200 www.in?neon.com/opto ? 1-800-777-4363 2 april 29, 1999 characteristics (each channel) t a =25c, unless otherwise speci?ed typical switching speeds t a =25c parameter symbol min. typ. max. unit condition emitter forward voltage v f 1.46 1.7 v i f =60 ma reverse breakdown voltage v br 6.0 v i r =10 m a reverse current i r 0.01 10 m a v r =6.0 v capacitance c j 20 pf v f =0 v, f=1.0 mhz thermal resistance r th 220 c/w junction to lead detector collector-emitter saturation voltage v ce (sat) 0.25 0.4 v i b =20 m a, i ce =1.0 ma collector-emitter leakage current i ceo 5.0 50 na v ce =10 v capacitance c ce 6.8 pf v ce =5.0 v, f=1.0 mhz thermal resistance r th 220 c/w junction to lead coupled characteristic C55c to 100c saturated current transfer ratio ctr (sat) 70 210 250 % i f =10 ma, v ce =0.4 v current transfer ratio collector-emitter ctr ce 100 300 450 % i f =10 ma, v ce =10 v isolation and insulation common mode rejection, output high cm h 1000 2000 v /m sv cm =500 v p-p , v cc =5.0 v, r l =1.0 k w , i f =0 ma common mode rejection, output low cm l 1000 2000 v /m sv cm =500 v p-p , v cc =5.0 v, r l =1.0 k w , i f =10 ma package capacitance c io 1.5 pf v io =0 v, 1.0 mhz insulation resistance r io 10 11 10 14 w v io =500 vdc leakage current, inputCoutput i io 10 m a relative humidity 50%, v io 3000 vdc, 5.0 sec. non-saturated switching symbol typ. max. unit test condition delay t d 0.8 2.0 m s rise t r 2.0 5.0 m s v cc =5.0 v storage t s 0.4 1.5 m s r l =75 w fall t f 2.0 5.0 m s i f =10 ma propagationChigh to low t phl 1.0 3.0 m s 50% of v pp propagationClow to high t plh 1.5 4.0 m s saturated switching (1) symbol typ. max. unit test condition delay t d 0.7 2.0 m s rise t r 1.0 3.0 m s v ce =0.4 v storage t s 13.5 30 m s r l =1.0 k w fall t f 12 30 m s i f =10 ma propagationChigh to low t phl 1.4 5.0 m s v cc =5.0 v, v th =1.5 v propagationClow to high t plh 15 40 m s gy,,
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) ILH200 www.in?neon.com/opto ? 1-800-777-4363 3 april 29, 1999 figure 1. forward current versus forward voltage and temperature figure 2. peak led current versus duty factor refresh rate and temperature figure 3. normalized non-saturated current transfer ratio versus temperature and led current figure 4. normalized non-saturated current transfer ratio versus temperature and led current 1.8 1.6 1.4 1.2 1.0 0.8 .1 1 10 100 -55c -25c 0c 25c 85c 125c vf - forward voltage - v if - forward current - ma 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 df - duty factor - % if(pk) - peak led current - a 10khz 1khz 100 hz 10khz 1khz 100hz 60 ma 25c 125c tj(max) = 150c 125 100 75 50 25 0 -25 -50 0.2 0.4 0.6 0.8 1.0 1.2 .5 m a 1 ma 5 ma 10 ma ta - ambient temperature - c nctrce - normalized ctr normalized to: ta = 25 c vce = 10v, if = 10 ma 125 100 75 50 25 0 -25 -50 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 m a 20 ma 30 ma 60 ma ta - ambient temperature - c nctrce - normalized ctr normalized to: ta = 25c vce = 10v, if = 10 ma vce = 10 v figure 5. normalized saturated current transfer ratio versus temperature and led current figure 6. normalized saturated current transfer ratio versus temperature and led current figure 7. collector-emitter current versus temperature and led current figure 8. collector-emitter current versus temperature and led current 125 100 75 50 25 0 -25 -50 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.5 ma 1 ma 5 ma 10 ma ta - ambient temperature - c nctrce(sat) - normalized saturated ctr normalized to ta =25c vce = 10 v, if = 10 ma vce = 0.4 v 125 100 75 50 25 0 -25 -50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 ma 20 ma 30 ma 60 m a ta - ambient temperature - c nctr(sat)- normalized saturated ctr normalized to: ta = 25c vce = 10 v , if = 10 ma vce = 0.4 v 125 100 75 50 25 0 -25 -50 .1 1 10 100 0.5 m a 1 m a 5 m a 10 ma ta - ambient temperature - c ice - collector current - ma vce = 10 v 125 100 75 50 25 0 -25 -50 0 50 100 150 200 60 m a 30 m a 20 m a 10 m a ta - ambient temperature - c ice - collector current - ma vce = 10 v gy,,
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) ILH200 www.in?neon.com/opto ? 1-800-777-4363 4 april 29, 1999 figure 13. propagation delay versus temperature and collector load resistance for i f =10 ma figure 14. propagation delay versus temperature and collector load resistance for i f =20 ma figure 15. common mode transient rejection figure 16. saturated switching 125 100 75 50 25 0 -25 -50 1 10 10 0 1000 47k w tph l 47k w tplh 10k w tph l 10k w tplh 2.2k w tph l 2.2k w tplh ta - ambient temperature - c propagation delay - s vcc = 5.25v, rbe = open, vth = 1.5v 125 100 75 50 25 0 -25 -50 1 10 100 1000 47k w tphl 47k w tplh 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - s vcc = 5.25v, rbe = open, vth = 1.5v 2200 2000 1800 1600 1400 1200 1000 0 5000 10000 15000 20000 25000 vcm-common mode voltage (v) rate of common mode voltage change-v/s ta=25c, vcc=5.0v if(low)=10 ma, rl=1k w if(high)=0 ma cmr(low) cmr(high) v cc v o r l i f v o v th =1.5 v t phl t plh figure 9. saturated collector-emitter current versus temperature and led current figure 10. saturated collector-emitter current versus temperature and led current figure 11. collector-emitter leakage current versus temperature figure 12. propagation delay versus temperature and collector load resistance for i f =5.0 ma 125 100 75 50 25 0 -25 -50 .1 1 10 100 0.5 m a 1 ma 5 ma 10 ma 20 ma 30 ma 60 ma ta - ambient temperature - c ice - collector current - ma vce = 0.4 v 125 100 75 50 25 0 -25 -50 .1 1 10 100 0.5 ma 1 ma 5 ma 10 ma ta - ambient temperature - c ice - collector current - ma vce = 0.4 v 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 ta - ambient temperature - iceo - collector-emitter - na worst case typical vce = 10v 125 100 75 50 25 0 -25 -50 1 10 10 0 1000 47k w tph l 47k w tplh 10k w tph l 10k w tplh 2.2k w tph l 2.2k w tplh ta - ambient temperature - c propagation delay - s vcc = 5.25v, rbe = open, vth = 1.5v gy,,
|
